triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 4, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 12-19 ghz vsat amplifier TGA2508-EPU key features ? 0.50 um phemt technology ? 30 db nominal gain ? 30 dbm p1db @ 15 ghz ? bias conditions: 7 v, 433 ma ? chip dimensions: 2.1 x 1.1 x 0.1 mm primary applications ? vsat ground terminals ? point to point radio ? military ku band preliminary measured data bias conditions: vd = 7 v, id = 433 ma 10 15 20 25 30 35 10 11 12 13 14 15 16 17 18 19 20 fre que nc y (ghz) gain (db) 25 26 27 28 29 30 31 32 12 13 14 15 16 17 18 19 frequency (ghz) pout @ 1db & 2db compression (dbm) p2db p1db
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 4, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table i maximum ratings 5/ symbol parameter value notes v + positive supply voltage 8 v 4/ v - negative supply voltage range -2 to 0 v i + positive supply current (quiescent) 591 ma 4/ | i g | gate supply current 16 ma p in input continuous wave power 17 dbm p d power dissipation 6.75 w 3/ 4 / t ch operating channel temperature 150 0 c1/ 2 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings apply to each individual fet. 2/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced from 6.4e+7 to 1e+6 hrs. 4/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 5/ these ratings represent the maximum operable values for this device. TGA2508-EPU
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 4, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA2508-EPU table ii electrical characteristics (ta = 25 o c 5 o c) parameter typical units drain operating 7 v quiescent current 433 ma small signal gain 30 db input return loss (linear small signal) 17 db output return loss (linear small signal 7 db output power @ 1 db compression gain @ 15ghz 30 dbm table iii thermal information* parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) vd = 7 v i d = 433 ma pdiss = 3.031 w 105.92 11.85 6.4e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. * this information is a result of a thermal model.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 4, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA2508-EPU preliminary measured data bias conditions: vd = 7 v, id = 433 ma 10 12 14 16 18 20 22 24 26 28 30 32 34 36 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) gain (db) 10 12 14 16 18 20 22 24 26 28 30 32 34 36 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) gain (db) - 40 0 c + 25 0 c + 70 0 c
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 4, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA2508-EPU preliminary measured data bias conditions: vd = 7 v, id = 433 ma -30 -25 -20 -15 -10 -5 0 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) input return loss (db) -30 -25 -20 -15 -10 -5 0 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 4, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice preliminary measured data bias conditions: vd = 7 v, id = 433 ma 25 26 27 28 29 30 31 32 12 13 14 15 16 17 18 19 frequency (ghz) pout @ 1db & 2db compression (dbm) p1db p2db frequency @ 15 ghz 10 15 20 25 30 35 -15-13-11-9-7-5-3-1 1 3 5 7 9 pin (dbm) pout (dbm) TGA2508-EPU - 40 0 c + 25 0 c + 70 0 c
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 4, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice preliminary measured data bias conditions: vd = 7 v, id = 433 ma 0 5 10 15 20 25 30 35 12 13 14 15 16 17 18 19 frequency (ghz) pae @ 1db & 2db compression (%) p2db p1db TGA2508-EPU 14 16 18 20 22 24 26 28 30 32 -20 -15 -10 -5 0 5 10 15 pin (dbm) pout (dbm) 400 440 480 520 560 600 640 680 720 760 ids (ma) 14ghz 14.5ghz 15ghz series4
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 4, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice mechanical drawing TGA2508-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. 1 2 3 4 5 6 0.599 (0.024) 0.120 (0.005) 0.145 (0.006) 1.982 (0.078) 2.108 (0.083) 0.119 (0.005) 0.536 (0.021) 0.970 (0.038 1.138 (0.045) 1.984 (0.078) 1.784 (0.070) 0.118 (0.005) 1.020 (0.040) units: millimeters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) bond pad #1: bond pad #2: bond pad #3: bond pad #4: bond pad #5: bond pad #6: (rf in) (vg) (rf out) (vd) 0.098 x 0.199 0.099 x 0.099 0.098 x 0.099 0.099 x 0.198 0.098 x 0.198 0.202 x 0.098 (0.004 x 0.008) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.008) (0.004 x 0.008) (0.008 x 0.004) 0.801 (0.032) 0.738 (0.029) 0.333 (0.013) 0.396 (0.016) (dc gnd)* (dc gnd)* * note: rf gnd is back side of mmic.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 4, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice chip assembly diagram TGA2508-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. vd vg rf in rf out
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 4, 2004 10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA2508-EPU reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c.
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